Dry etching characteristics of GaN materials for high voltage LED fabrication

摘要：

　　Inductively coupled plasma (ICP) deep etching characteristics of GaN materials with an etching depth up to 7 μm is investigated.The tapered isolation trench is transferred into GaN epitaxial layer using a combination of Cl2/BCl3 gas chemistry and SiO2 hard mask.By adjusting ICP etching process parameters,tapered isolation trench with 45°oblique angle can be formed on LED wafer,allowing for conformal metal lines coverage across the isolation trench smoothly,which can play an important role in the interconnection of multiple microchips for high voltage light emitting diodes (HV LEDs) fabrication.

作者: Zhou Shengjun Liu Sheng Ding Han

作者单位: State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering,Shanghai J State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering,Shanghai J

会议类型: 国际会议

会议名称: 2012 Postdoctoral Symposium of China on Materials Science & Engineering -- Advanced Materials for Sustainable Development (2012 年中国博士后材料科学与工程学术论坛--先进材料与可持续发展)

会议地点: 上海

会议语种:英文

页码: 199-199

在线出版日期: 2012-10-19（万方平台首次上网日期，不代表论文的发表时间）