Effect of Al203 doping on the electric and dielectric properties of ZnO linear resistor

摘要：

　　Al doped ZnO linear resistors were prepared by the high energy ball milling.We investigated the effects of contents of Al2O3 on the electrical properties of the linear resistors.Al doping has been shown to reduce the nonlinear coefficient to some extent at the sintering temperature of 1350 ℃.And when the content of Al2O3 was 3.5 mol%,we get the best performance of linear resistor of which the nonlinear coefficient of 1.0.And the dielectric constant of ZnO linear resistors was The most stable over the frequency range of 105-107Hz when the content of Al2O3 was 4.5 mol%.

关键词： Linear resistor zinc oxide alumina electrical properties microstructur

作者: Qi Jiapeng Ye Xiao Jiao Lei Xu Hongxing Yang Yongtao Cao Jun Xu Dong

作者单位: School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China; Key Laborat 1.School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China; Changzhou E

会议类型: 国际会议

会议名称: 2012 Postdoctoral Symposium of China on Materials Science & Engineering -- Advanced Materials for Sustainable Development (2012 年中国博士后材料科学与工程学术论坛--先进材料与可持续发展)

会议地点: 上海

会议语种:英文

页码: 225-225

在线出版日期: 2012-10-19（万方平台首次上网日期，不代表论文的发表时间）