Evaluation on the residual stresses of silicon-doped CVD diamond films using X-ray diffraction and Raman spectroscopy
The residual stress of silicon-doped CVD diamond films with various SiC/C ratios are evaluated using both X-ray diffraction analysis and Raman spectroscopy measurements.The examined Si-doped diamond films are deposited on WC-Co substrate in a home-made bias-enhanced HFCVD apparatus.Si(OC2H5)4 is dissolved in acetone to obtain the desired Si/C in the reaction gas varying from 1000ppm to 14000ppm.It can be observed from the SEM and XRD spectra that the grain size decreases and the 110 texture becomes dominant as the silicon concentration increases.With X-ray diffraction,the total residual stress of as-deposited Si-doped diamond films are calculated using the (sinmz) method,which measures the (220) Bragg diffraction peaks for ψ-values ranging from 0° to 45°.Using Raman spectroscopy,the residual stress is determined by detecting the diamond Raman peak shift from the natural diamond line at 1332cm-1.The residual stresses obtained from above two measurements present good agreement on both values and evolutions on silicon doping level of diamond films.
Si-doping diamond film residual stress X-ray diffraction Raman spectroscopy
Chen SuLin Shen Bin Zhang JianGuo Wang Liang Sun Fanghong
School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
国际会议
上海
英文
271-271
2012-10-19（万方平台首次上网日期，不代表论文的发表时间）