Electrical properties and microstructure of Al203 doped ZnO linear resistor

摘要：

　　In this paper,Al2O3 doped ZnO linear resistor was prepared by high energy ball milling.Its microstructure and crystal phases have been investigated by SEM,and XRD.And the electrical properties of the linear resistor can be influenced by contents of Al2O3 and its sintering temperature.The results showed that the main phase of Al2O3 doped ZnO Linear resistor is Zn2Si04,and a second phase of ZnO is generated.When the sintering temperature is 1350 ℃ and the molar fraction of Al2O3 is 3.5%,we get the Nonlinear coefficient of 1.0 which is the best performance of linear resistance.The dielectric constant of ZnO linear resistor is not influenced so clearly by the chenging contents of the doped Al2O3,but suffered significant impact by the sintering temperature.

关键词： Linear resistor zinc oxide alumina electrical properties microstructure

作者: Yang Yongtao Ding Hao Ye Xiao Jiao Lei Luo Xuedan Xu Dong

作者单位: School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China; State Key L School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China

会议类型: 国际会议

会议名称: 2012 Postdoctoral Symposium of China on Materials Science & Engineering -- Advanced Materials for Sustainable Development (2012 年中国博士后材料科学与工程学术论坛--先进材料与可持续发展)

会议地点: 上海

会议语种:英文

页码: 286-286

在线出版日期: 2012-10-19（万方平台首次上网日期，不代表论文的发表时间）