Prepared for GaAs PHEMT Material

摘要：

　　In this paper,GaAs PHEMT samples are prepared by the method of molecular beam epitaxy (MBE),The optimal parameters are determined by studying the impact of the barrier layer thickness,spacer layer thickness,Al composition of the barrier layer and the spacer layer,the channel thickness and channel In composition on Ns and μn.

关键词： GaAs materials pseudomorphic high electron mobility transistors(PHEMT) molecular beam epitaxy Component Optimization

作者: Li Yanlei Yang Ruixia

作者单位: No.5340,Xipingdao,Beichen District, Hebei University of Technology,Tianjin,300130,P.R.China

会议类型: 国际会议

会议名称: The First International Workshop on Hydraulic Equipment and Support Systems for Mining (第一届液压技术与矿山装备国际研讨会(IWHEM2012))

会议地点: 辽宁葫芦岛

会议语种:英文

页码: 594-597

在线出版日期: 2012-08-07（万方平台首次上网日期，不代表论文的发表时间）