Effects of Substrate Temperature on the Properties of Silicon Nitride Films by PECVD

摘要：

　　Under different growth conditions,silicon nitride (SiNx) thin films were deposited successfully on Si(100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD).The thickness,refractive index and growth rate of the thin films were tested by ellipsometer.The surface morphologies of the thin films were investigated using atomic force microscope (AFM).The average transmittance in the visible region was over 90%.

关键词： Silicon nitride films PECVD

作者: Chunya Li Xifeng Li Longlong Chen Jifeng Shi Jianhua Zhange

作者单位: Key Laboratory of Advanced Display and System Applications,Ministry of Education,Shanghai University,Shanghai 200072,China

会议类型: 国际会议

会议名称: 2012 Workshop on Inorganic Thin Films and Coatings (2012年无机薄膜与涂层学术研讨会)

会议地点: 桂林

会议语种:英文

页码: 12-15

在线出版日期: 2012-07-16（万方平台首次上网日期，不代表论文的发表时间）