Ferroelectric Property and Microstructures of La-doped Bi4Ti3O12 Thin Films

摘要：

　　La-doped bismuth titanate (Bi4-xLaxTi3Ol2:BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique.These samples had polycrystalline Bi-layered perovskite structure without preferred orientation,and consisted of well developed rod-like grains with random orientation.For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current,whereas for the samples with x=0.5and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops.The remanent polarization (Pr) and co-ercive field (Ec) of the BLT ceramic with x=0.75 were above 20μC/cm2 and 85KV/cm,respectively.

关键词： Ferroelectric Dielectric Films

作者: X.A.Mei R.F.Liu C.Q.Huang J.Liu

作者单位: School of Physics and Electronics,Hunan Institute of Science and Technology,Yueyang,414000,China

会议类型: 国际会议

会议名称: 2012 Workshop on Inorganic Thin Films and Coatings (2012年无机薄膜与涂层学术研讨会)

会议地点: 桂林

会议语种:英文

页码: 114-117

在线出版日期: 2012-07-16（万方平台首次上网日期，不代表论文的发表时间）