Dielectric and Ferroelectric Properties of Er2O3-doped Bi4Ti3O12 Thin Films

摘要：

　　Er2O3-doped bismuth titanate (Bi4-xErxTi3O12,BET) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique.These samples had polycrystalline Bi-layered perovskite structure without preferred orientation,and consisted of well developed rod-like grains with random orientation.Er-doping into BIT caused a large shift of the Curie temperature (Tc) from 675℃ to lower temperature and a improvement in dielectric property.The experimental results indicated that Er doping into BIT also result in a remarkable improvement in ferroelectric property.The Pr and the Ec values of the BET film with x=0.75 were 21 μC/cm2 and 80 kV/cm,respectively.

关键词： Ferroelectric Dielectric Films

作者: X.B.Liu X.A.Mei C.Q.Huang J.Liu

作者单位: School of Physics and Electronics,Hunan Institute of Science and Technology,Yueyang,414000,China

会议类型: 国际会议

会议名称: 2012 Workshop on Inorganic Thin Films and Coatings (2012年无机薄膜与涂层学术研讨会)

会议地点: 桂林

会议语种:英文

页码: 118-121

在线出版日期: 2012-07-16（万方平台首次上网日期，不代表论文的发表时间）