Electrical Characteristics and Microstructures of Bi2.9Pro.9Ti3O12 and Bi2.9Pro.92Ti2.97Vo.o3O12 Thin Films

摘要：

　　Bi2.9Pr0.9Ti3O12(BPT) and Bi2.9Pr0.9Ti2.97V0.03O12(BPTV) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique.These samples had polycrystalline Bi-layered perovskite structure without preferred orientation,and consisted of well developed rod-like grains with random orientation.The experimental results indicated that Pr doping into Bi4Ti3O12 (BIT) result in a remarkable improvement in ferroelectric property.The remanent polarization (Pr) and coercive field (Ec) of the BPT film were 28 μC/cm2 and 80 kV/cm,respectively.Furthermore,V substitution improves the Pr value of the BTVT film up to 43 μC/cm2,which is much larger than that of the BPT film.

关键词： Ferroelectric Dielectric films

作者: M.Chen X.A.Mei R.F.Liu C.Q.Huang J.Liu

作者单位: School of Physics and Electronics,Hunan Institute of Science and Technology,Yueyang,414000,China

会议类型: 国际会议

会议名称: 2012 Workshop on Inorganic Thin Films and Coatings (2012年无机薄膜与涂层学术研讨会)

会议地点: 桂林

会议语种:英文

页码: 122-125

在线出版日期: 2012-07-16（万方平台首次上网日期，不代表论文的发表时间）