Electrical Characterization and Microstructures of Bi3.3Tb0.6Ti3O12and Bi3.3Tb0.6Ti2.97V0.03O12 Thin Films

摘要：

　　Bi3.3Tb0.6Ti3O12(BTT),Bi3.3Tb0.6Ti2.97V0.03O12(BTTV),and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique.These samples had polycrystalline Bi-layered perovskite structure without preferred orientation,and consisted of well developed rod-like grains with random orientation.The experimental results indicated that Tb doping into BIT also result in a remarkable improvement in ferroelectric property.The remanent polarization (Pr) and coercive field (Ec) of the BTT film were 25μC/cm2 and 85 kV/cm,respectively.Furthermore,V substitution improves the Pr value of the BTVT film up to 35 μC/cm2,which is much larger than that of the BTT film.

关键词： Ferroelectric Dielectric films

作者: R.F.Liu M.B.Sun W.P.Ding X.A.Mei

作者单位: School of math,Hunan Institute of Science and Technology,Yueyang,414000,China

会议类型: 国际会议

会议名称: 2012 Workshop on Inorganic Thin Films and Coatings (2012年无机薄膜与涂层学术研讨会)

会议地点: 桂林

会议语种:英文

页码: 126-129

在线出版日期: 2012-07-16（万方平台首次上网日期，不代表论文的发表时间）