Improvement of n/i Interface Layer Properties in Microcrystalline Silicon Solar Cell

摘要：

　　Properties of n-i interface are critical for hydrogenated microcrystalline silicon (μc-Si:H) substrate-type (n-i-p) solar cell as it affects carrier collection,which is visible in the red response.Here,we report a remarkable improvement in visible-infrared responses upon hydrogen plasma treatment (HPT) of n/i interface.We demonstrate that hydrogen plasma treatment in the initial stage of a μc-Si:H i layer growth affects the red response of μc-Si:H solar cell.At the optimal deposition condition,18% higher short-circuit current density was obtained than its count part without using HPT.

关键词： microcrystalline silicon hydrogen plasma treatment solar cell

作者: Xiangbo Zeng Jinyan Li Xiaobing Xie Ping Yang Hao Li Haibo Xiao Xiaodong Zhang Qiming Wang

作者单位: State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

会议类型: 国际会议

会议名称: 2012 Workshop on Inorganic Thin Films and Coatings (2012年无机薄膜与涂层学术研讨会)

会议地点: 桂林

会议语种:英文

页码: 193-196

在线出版日期: 2012-07-16（万方平台首次上网日期，不代表论文的发表时间）