The Study of Microcrystalline Silicon Thin Films Prepared by PECVD

摘要：

　　Under different growth conditions,microcrystalline silicon thin films are deposited successfully on glass substrates by the double-frequency plasma enhanced chemical vapor deposition (PECVD).We report the systematic investigation of the effect of process parameters (hydrogen dilution,substrate temperature,forward power,reaction pressure,et al.) on the growth characteristics of microcrystalline silicon thin films.Raman scattering spectra are used to analyze the crystalline condition of the films and the experimental results.Optimizing the process parameters,the highest crystalline volume fraction of microcrystalline silicon films was achieved.It is found that the crystalline volume fraction of microcrystalline silicon films reaches 72.2% at the reaction pressure of 450 Pa,H2/SiH4 flow ratio of 800sccm/10sccm,power of 400 W and substrate temperature of 350 ℃.

关键词： Microcrystalline silicon thin film PECVD

作者: Chunya Li Hao Zhang Jun Li Xifeng Li Jianhua Zhang

作者单位: Key Laboratory of Advanced Display and System Applications,Ministry of Education,Shanghai University,Shanghai 200072,China

会议类型: 国际会议

会议名称: 2012 Workshop on Inorganic Thin Films and Coatings (2012年无机薄膜与涂层学术研讨会)

会议地点: 桂林

会议语种:英文

页码: 197-200

在线出版日期: 2012-07-16（万方平台首次上网日期，不代表论文的发表时间）