Ferroelectric Properties of Bismuth Titanate Ceramics by Tb3+,4+/V5+ Substitution
The Ferroelectric properties and Microstructures of Bi3.3Tb0.6Ti3O12 (BTT) and Bi3.3Tb0.6Ti2.97V0.03O12 (BTTV) ceramics prepared at 1100℃ by a conventional ceramic technique were investigated.These ceramics possess random-oriented polycrystalline structure.The remanent polarization (Pr) and coercive field (Ec) of the BTT ceramics are 23μC/cm2 and 80kV/cm,respectively.Furthermore,V substitution improves the Pr value of the BTTV ceramics up to 35μC/cm2,which is larger than that of the BTT ceramics.Therefore,co-sustitution of Tb and V in Bi4Ti3O12 (BIT) ceramic is effective for the improvement of its ferroelectricity.
Microstructure Ceramic Ferroelectric Doping Dielectric
X.A.Mei R.F.Liu C.Q.Huang J.Liu
School of Physics and Electronics,Hunan Institute of Science and Technology,Yueyang,414000,China
国际会议
桂林
英文
150-153
2012-07-16（万方平台首次上网日期，不代表论文的发表时间）