Electrical Characterization and Microstructures of Bi3.2sEr0.75Ti3O12 and Bi2.9Er0.75Ti2.97V0.03O12 Thin Films
Bi3.25Er0.75Ti3O12(BET) and Bi3.25Er0.75Ti2.97V0.03O12(BETV) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique.These samples had polycrystalline Bi-layered perovskite structure without preferred orientation,and consisted of well developed rod-like grains with random orientation.The experimental results indicated that Er doping into Bi4Ti3O12 (BIT) also result in a remarkable improvement in ferroelectric property.The remanent polarization (Pr) and coercive field (Ec) of the BET film were 17 μC/cm2 and 80 kV/cm,respectively.Furthermore,V substitution improves the Er value of the BETV films up to 28 μC/cm2,which is much larger than that of the BET film.
Ferroelectric Dielectric Films
C.Q.Huang J.G.Liu X.A.Mei J.Liu
School of Physics and Electronics,Hunan Institute of Science and Technology,Yueyang,414000,China
国际会议
桂林
英文
178-181
2012-07-16（万方平台首次上网日期，不代表论文的发表时间）