Electrical Characteristics and Impedance spectra of Gd2O3-doped Bi4Ti3O12 Ceramics
The electrical properties of Gd2O3-bismuth titanate (Bi4-xGdxTi3O12) prepared by a conventional ceramic technique have been investigated.At applied d.c.field below 200V/mm,the current-voltage curve of Gd-doped sample exhibits a simple ohmic behavior.The impedance spectrum of Gd-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions.XRD,SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform.Gd-doped sample exhibit randomly oriented and plate-like morphology.
Microstructure Impedance Electrical properties bismuth titanate
X.B.Liu X.A.Mei C.Q.Huang J.Liu
School of Physics and Electronics,Hunan Institute of Science and Technology,Yueyang,414000,China
国际会议
桂林
英文
182-185
2012-07-16（万方平台首次上网日期，不代表论文的发表时间）