The Effect of Oxide Fixed Charge on the Breakdown Characteristics of SiC Lateral Super Junction Devices
In this paper,the positive and negative effects of oxide fixed charge on the breakdown characteristic of lateral SiC super junction devices are studied.Simulation results show that in the super junction devices with oxide layer,the negative (or positive) fixed charge on the SiO2/SiC interface act as a like p-pillar (or n-pillar) and enhance the depletion of n-pillar (or p-pillar),which result in a charge compensation and improvement of the breakdown characteristics of the devices.At the same time,a phenomenon of electric field crowding can be caused by the fixed charge and result in a decreasing of the breakdown voltage,this negative effect can be suppressed sufficiently by a field plate.
SiC super junction oxide fixed charge charge compensation positive effect negative effect breakdown characteristic electric field crowding
Hujun Jia Guodan Zhou Yintang Yang Baoxing Duan
Key Lab of Wide Band Gap Semiconductor materials and Devices,College of Microelectronics, Xidian University, Xian 710071, China
国际会议
台湾
英文
1585-1589
2011-12-11（万方平台首次上网日期，不代表论文的发表时间）