Structural Stress Analysis of 16x16 InSb Infrared Focal Plane Array with Underfill

摘要：

　　To reduce the fracture probability of InSb infrared detector in thermal shock from room temperature to 77K,for 16×16 mesa structure InSb infrared focal plane array detector with underfill,here ANSYS,is employed to research the impacts from both indium bump diameters and heights on both Von Mises stress and its distribution.Simulation results show that when the diameters of indium bump increases from 20μm to 36μm in step of 4μm,the maximal Von Mises stress in the InSb chip increases slowly.Besides,when the height of indium bump increases from 8μm to 24μm in step of 8μm,the maximal Von Mises stress in the InSb chip reduces from 1200MPa to 1030MPa.Von Mises stress of Si readout integrated circuits is also much smaller than that of InSb chip.

关键词： Detector ANSYS InSb Von Mises stress

作者: Qian Yu Liwen Zhang Qingduan Meng

作者单位: Henan University of Science and Technology, Luoyang, Henan, 471003, China

会议类型: 国际会议

会议名称: the Second International Conference on Frontiers of Manufacturing and Design Science(第二届制造与设计科学国际会议(ICFMD 2011))

会议地点: 台湾

会议语种:英文

页码: 4320-4324

在线出版日期: 2011-12-11（万方平台首次上网日期，不代表论文的发表时间）