Preparation and Characterization of High Purity β-SiC Powder
SiC powder can be produced generally through the Acheson process and it is required long carbothermic reaction time of SiO2 with carbon powder around 2200 ℃ ~ 2400 ℃.Due to the high reaction temperature and long reaction time of the process,the powders produced have a large particle size and consist of mostly alpha phase SiC.Synthetic temperature of beta phase SiC powder is known to produce at 1700 ℃ ~ 1900 ℃ which is lower temperature than that of alpha phase SiC powder.We prepared β-SiC powder by heating precursor derived from the mixture of phenolic resin and tetraethyl orthosilicate.The precursor was heated at 1800 ℃ for 4 h in an Ar atmosphere.In order to examine the pyrolysis residue after the heat treatment,the SiC powder was analyzed with XRD and SEM.The X-ray diffraction result of the SiC powder shows the diffraction peaks around 35°,60°,and 73° corresponded to the beta SiC phase.β-SiC powder prepared in this study contains lower metallic impurities compare than that of α-SiC powder prepared from Acheson method and is able to use as a good starting material for SiC single crystal growing.
β-SiC Carbothermal TEOS Phenolic resin
Eunjin JUNG Yoon Joo LEE Soo-Ryong KIM Woo-Teck KWON Se Young CHOI Younghee KIM
Energy Materials Center,Korea Institute of Ceramic Engineering and Technology 233-5,Gasan-Dong,Guemc Department of Materials Science and Engineering,Yonsei University,Seoul,Korea
国际会议
The Seventh China International Conference on High-Performance Ceramics (第七届先进陶瓷国际研讨会(CICC-7))
厦门
英文
3-6
2011-11-04（万方平台首次上网日期，不代表论文的发表时间）