Synthesize Ti3SiC2 and Ti3SiC2-Diamond Composites at High Pressure and High Temperature
Ti3SiC2,a ternary carbide,was proposed at this paper to use as the binder of polycrystalline diamonds to overcome the weaknesses of traditional metal binders and ceramic binders.Ti3SiC2 was first reported to be in-situ synthesized under high pressure (4GPa) and at high temperature (1100℃) (HPHT) from the mixtures of Ti,Si and graphite powders or the mixture of Ti,SiC and graphite powders.Ti3SiC2-diamond composites were also made at HPHT from the previous mixtures and diamond particles.TiCx,Ti5Si3Cx and TiSi2 were main impurities and/or intermediate products of Ti3SiC2 samples synthesized at HPHT.Ti3SiC2 content increased as synthesized time increased from l0 min to 60 min.For as-synthesized composites,diamond particles were evenly distributed in matrix.The diamond particles are bonded well with the matrix by three types of interface.
Ti3SiC2 Polycrystalline diamonds HPHT Ceramic composites
Aiguo Zhou Liang Li raichao Su Shangsheng Li
School of Materials Science and Engineering,Henan Polytechnic University,Jiaozuo,Henan 454100,China
国际会议
The Seventh China International Conference on High-Performance Ceramics (第七届先进陶瓷国际研讨会(CICC-7))
厦门
英文
671-675
2011-11-04（万方平台首次上网日期，不代表论文的发表时间）