Silicon Carbide Composites Deposited in Silicon Carbide Whiskers by CVI Process

摘要：

　　Chemical vapor deposition (CVD) is an effective method of preparing silicon carbide whiskers or films and chemical vapor infiltration (CVI) can be successfully used as the preparation of SiC composites.In this paper,silicon carbides whiskers were firstly deposited on reaction-bonded silicon carbide (RB-SiC) substrates under different flow rate of dilute gas by CVD process,and then silicon carbide composites were prepared by chemical vapor infiltration in the as-obtained SiC whiskers in an upright chemical vapor deposition furnace of φ150mm×450mm with methyltrichloride silicane (MTS) as precursor gas,H2 as carrier gas and Ar as dilute gas.The morphologies of the SiC whiskers grown on RB-SiC substrate and SiC composites infiltrated in SiC whiskers were determined by scanning electron microscope (SEM),and the crystalline phase of the final deposits were confirmed with X-ray diffractometry (XRD).As a result,the whiskers with a diameter of about 2μm were deposited on the surface of RB-SiC substrate,and the curly defects of whiskers decrease with the addition of dilute gas.And by chemical vapor infiltration in as-prepared SiC whiskers,the SiC composites were successfully prepared.Finally the deposits were determined as β-SiC.

关键词： chemical vapor infiltration chemical vapor deposition silicon carbide composites silicon carbide whiskers

作者: MENG Fantao DU Shanyi ZHANG Yumin

作者单位: School of materials science and engineering,Shandong University of Technology,Zibo 255049,China;Cent Center for Composite Materials,Harbin Institute of Technology,Harbin 150001,China

会议类型: 国际会议

会议名称: The Seventh China International Conference on High-Performance Ceramics (第七届先进陶瓷国际研讨会(CICC-7))

会议地点: 厦门

会议语种:英文

页码: 789-792

在线出版日期: 2011-11-04（万方平台首次上网日期，不代表论文的发表时间）