GIAXD and XPS Characterization of sp3C Doped SiC Superhard Nanocomposite Film

摘要：

　　The sp3C doped SiC superhard nanocomposite films had been deposited on stainless steel (SS) substrates at different temperature by electron beam-physical vapor deposition (EB-PVD).The sp3C doped SiC film was studied by grazing incidence X-ray asymmetry diffraction (GIAXD),and X-ray photoelectron spectroscopy (XPS).The results of GIAXD showed that the sp3C doped SiC nanocomposite films were not a perfect crystal,which was composed with fine SiC nanocrystals,and a second phase very similar to diamond like carbon (DLC).XPS analysis showed that the excess C existed in the present films changed from diamond into DLC structure from the surface to inner of the films.

关键词： SiC GIAXD XPS Microstructure

作者: Jian Yi Xiaodong He Yue Sun Zhipeng Xie Weijiang Xue Fenyan Cao

作者单位: School of Mechanical Engineer,Taizhou University,Taizhou 318000,P.R.China;Department of Materials Sc Center for Composite Materials,Harbin Institute of Technology,Harbin 150001,P.R.China Department of Materials Science & Engineering,Tsinghua University,Beijing 100084,P.R.China School of Mechanical Engineer,Taizhou University,Taizhou 318000,P.R.China

会议类型: 国际会议

会议名称: The Seventh China International Conference on High-Performance Ceramics (第七届先进陶瓷国际研讨会(CICC-7))

会议地点: 厦门

会议语种:英文

页码: 971-974

在线出版日期: 2011-11-04（万方平台首次上网日期，不代表论文的发表时间）