会议专题

B2O3-doped ZnO-Pr6O11 based varistor ceramics

  B2O3-doped ZnO-Pr6O11 based varistor ceramics were fabricated by sintering samples at 1350 ℃ for 2 h with conventional ceramic processing method.The microstructure and electrical properties of the as-prepared samples were investigated.X-ray diffraction analysis showed that after the addition of B2O3 with the amount designed in this study,no new phase was examined in the detection limit.Through scanning electron microscopy it was found that the doping of B2O3 can promote the growth of ZnO grains,and the sintering of the samples.The result of electrical properties indicated that the nonlinear coefficient and varistor voltage of the samples could be improved to some extent with appropriate doping amount of B2O3,resulting in the highest nonlinear coefficient 6.7,lowest leakage current 329 μA/cm2,and highest varistor voltage 92.4 V/mm,respectively.

ZnO varistor Pr6O11 B2O3 doping Electrical properties

Yueping Wang Zhiiian Peng Hai Feng Chengbiao Wang Zhiqiang Fu Longhao Qi Hezhuo Miao

School of Engineering and Technology,China University of Geosciences,Beijing 100083,China State Key Laboratory of New Ceramics and Fine Processing,Tsinghua University,Beijing 100084,P.R.Chin

国际会议

The Seventh China International Conference on High-Performance Ceramics (第七届先进陶瓷国际研讨会(CICC-7))

厦门

英文

1277-1280

2011-11-04(万方平台首次上网日期,不代表论文的发表时间)