Electrical and Physical Properties of the Bi3.25La0.75Ti3O12 Ferroelectric Thin Films Prepared by Conventional Temperature Annealing Process
We have investigated the structure and ferroelectric properties of the Bi3.25La0.75Ti3O12 (BLT) thin films on SiO2/Si substrate fabricated by sol-gel method.We used the BLT films were annealed at various temperatures of 600,650,and 700 ℃ for one hour by conventional furnace annealing (CTA).The temperature dependence of leakage currents densities of ferroelectric BLT thin films.The crystalline structure of the prepared BLT thin films was analyzed by X-ray diffraction (XRD).Field emission scanning electron microscopy (FESEM) was used to observe the film thickness and the surface morphology including grain size and porosity.The leakage current density and capacitance of thin film were measured by HP4156C.
ferroelectric rf sputtering BLT thin film electrical properties physical properties
Fann-Wei Yang Kai-Huang Chen Chien-Min Cheng
Department of Electronic Engineering,Southern Taiwan University,Tainan,Taiwan Department of Electronics Engineering and Computer Science,Tung-Fang Design University,Kaohsiung,Tai
国际会议
The Seventh China International Conference on High-Performance Ceramics (第七届先进陶瓷国际研讨会(CICC-7))
厦门
英文
1317-1320
2011-11-04（万方平台首次上网日期，不代表论文的发表时间）