Ferroelectric Properties and Microstructures of Tb4O7-doped Bi4Ti3O12 Thin Films

摘要：

　　Tb-doped bismuth titanate (BixTbyTi3O12 BTT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique,and the microstructures and ferroelectric properties of the films were investigated.Microstructure studies indicate that all of BTT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation.The experimental results indicate that Tb doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties.The remanent polarization (Pr) and coercive field (Ec) of the BTT film with y=0.6 were 22 μC/cm2 and 85 kV/cm,respectively.After 3 × 1010 switching cycles,20% degradation of Pr is observed in the film.

关键词： Ferroelectric Bismuth titanate Film Doping

作者: R.F.Liu X.A.Mei M.Chen C.Q.Huang J.Liu

作者单位: School of math,Hunan Institute of Science and Technology,Yueyang,414000,China

会议类型: 国际会议

会议名称: The Seventh China International Conference on High-Performance Ceramics (第七届先进陶瓷国际研讨会(CICC-7))

会议地点: 厦门

会议语种:英文

页码: 1325-1328

在线出版日期: 2011-11-04（万方平台首次上网日期，不代表论文的发表时间）