Electrical Properties and Microstructures of Tb4O7-doped Bi4Ti3O12 Ceramics

摘要：

　　The electrical properties of Tb4O7-bismuth titanate (Bi3.3Tb0.6Ti3O12) prepared by a conventional ceramic technique have been investigated.At applied d.c.field below 200V/mm,the current-voltage curve of Tb-doped sample exhibits a simple ohmic behavior.The impedance spectrum of Tb-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions.XRD,SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi4Ti3O12 and the distribution of every element is uniform.Tb-doped sample exhibit randomly oriented and plate-like morphology.

关键词： Microstructure Impedance Electrical property Bismuth titanate

作者: X.A.Mei M.Chen R.F.Liu C.Q.Huang J.Liu

作者单位: School of of Physics and Electronics,Hunan Institute of Science and Technology,Yueyang,414000,China

会议类型: 国际会议

会议名称: The Seventh China International Conference on High-Performance Ceramics (第七届先进陶瓷国际研讨会(CICC-7))

会议地点: 厦门

会议语种:英文

页码: 1329-1332

在线出版日期: 2011-11-04（万方平台首次上网日期，不代表论文的发表时间）