Top-down formation of GaN nanocone arrays for application in field emission

摘要：

　　We present a novel method to fabricate uniform GaN nanocone arrays (GNA) using Nickel-nanoisland masks.The nanoscale conelike arrays with high density can be formed over the entire 2-inch wafer by inductively couple plasma etching.The results of X-ray diffraction exhibit significant decrease on the (102) reflection in GaN sample with the GNA.Field-emission measurements show that the GNA with sharp tips have a turn-on field of~ 5.5 V/μ m.It is believed that the high aspect ratio resulting from the conelike morphology is responsible for the enhancement of the field-emission properties of GNA.

关键词： nanocone GaN field emission ICP

作者: Xinzhong Wang Guanghui Yu Shiguo Li Chengguo Wu

作者单位: Department of Electronics and Communications Technology, Shenzhen Institute of Information Technolog State Key laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and College of Sciences, PLA University of Science and Technology, Nanjing, 210007, China

会议类型: 国际会议

会议名称: the 2010 International Conference on Frontiers of Manufacturing and Design Science(第一届制造与设计科学国际会议(ICFMD 2010))

会议地点: 重庆

会议语种:英文

页码: 2514-2518

在线出版日期: 2010-12-11（万方平台首次上网日期，不代表论文的发表时间）