The Influence of Annealing Temperature on the Characteristics of 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 Thin Films
In this study,0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 + 1 wt% Bi2O3 (NBT-BT3) composition sintered at 1200℃ for 2h is used as target to deposit the NBT-BT3 thin films.The excess lwt% Bi2O3 is used to compensate the vaporization of Bi2O3 during the deposition process.Ferroelectric NBT-BT3 thin films are deposited on SiO2/Si and Pt/Ti/SiO2/Si substrates using RF magnetron sputter method using the ceramic target fabricated by ourselves.After depositing under the optimal parameters,the thin films are then heated by a conventional thermal annealing (CFA) process conducted in air at temperatures ranging from 600-800℃ for 60min.The morphologies of NBT-BT3 thin films are observed using SEM the crystalline structures of NBT-BT3 thin films are investigated using XRD patterns.The large memory window and stable leakage current density examination reveals that NBT-BT3 thin films annealed on 600℃ are better than other thin films under different CTA temperatures.Finally,the top view and cross-sectional images of SEM,memory windows,leakage currents and polarization characteristics of NBT-BT3 thin films are also well developed.
NBT-BT3 conventional thermal annealing RF magnetron sputter
Chien-Chen Diao Chia-Ching Wu Cheng-Fu Yang Chao-Chin Chan
Department of Electronic Engineering, Kao Yuan University, Kaohsiung, Taiwan Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung,Taiwan Department of Chemical and Biochemical Engineering, Kao Yuan University, Kaohsiung, Taiwan
国际会议
The Sixth China International Conference on High-Performance Ceramics(第六届中国先进陶瓷国际研讨会(CICC-6))
哈尔滨
英文
263-266
2009-08-16（万方平台首次上网日期，不代表论文的发表时间）