Memory Properties of SrBi2Ta2O9/Ba(Zr0.1Ti0.9)O3 Thin Films Prepared on Si Substrate
In this study,ferroelectric thin films of SrBi2Ta2O9 (SBT) or bilayered SrBi2Ta2O9/Ba(Zr0.1Ti0.9)O3 (SBT/BZT) are successfully deposited on Si substrate under the optimal RF magnetron sputtering conditions,and their electrical and ferroelectric characteristics are discussed.Ferroelectric thin films are deposited on Si substrate under the RF power of 80 W,chamber pressure of 10 mTorr,substrate temperature of 550℃,and different oxygen concentrations.The surface morphology of deposited thin films is observed from the FESEM images,and the memory windows and leakage current of the A1/SBT/BZT/Si (MFS) structure are measured by an impendence phase analyzer and a semiconductor parameter analyzer,respectively.The memory window,capacitance and leakage current density of MFS structures under different oxygen concentrations are also reported.We find that the memory window of bilayered SBT/BZT structure shows larger than one of single layer SBT structure.
SrBi2Ta2O9 Ba(Zr0.1Ti0.9)O3 bilayer thin film ferroelectric characteristics
Wen-Cheng Tzou Kai-Huang Chen Cheng-Fu Yang Ying-Chung Chen
Department of Electro-Optical Engineering, Southern Taiwan University, Tainan, Taiwan Department of Electronics Engineering and Computer Science, Tung-Fang Institute of Technology,Kaohsi Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung,Taiwan Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan
国际会议
The Sixth China International Conference on High-Performance Ceramics(第六届中国先进陶瓷国际研讨会(CICC-6))
哈尔滨
英文
304-306
2009-08-16（万方平台首次上网日期，不代表论文的发表时间）