Preparation and Dielectric Properties of Oriented PZT Thin Films by LB Technique
The oriented La modified PZT thin films were prepared on Pt/Ti/SiO2/Si substrate by the LB technique.The pre-sintering temperatures and the annealing temperatures for La modified PZT were determined by TG-DTA curves and XRD detect results.XRD detection of PZT and PZT with different La amount illustrated the crystal constructions and the effects by modification.The AFM observation of PLZT thin films with organic acid indicated that the LB technique could obtain smooth and flat film with the deposition of PLZT particles within nanometers on substrate.The detection results of the electrical properties indicated that the modification of La had great influence on the electric properties of LB thin film.PLZT thin film by annealing at 650℃ had better dielectric constant of 569.2 and dielectric loss of 0.4915 at 5 kHz.And the amount of La of 2% in mass gave the piezoelectric constant of 14pC/N.
PZT thin film La modification LB technique Dielectric property
D.Y.Tang X.H.Zhang Y.J.Qiao Y.Li
Department of Chemistry, School of Science, Harbin Institute of Technology, Harbin 150001, China College of Materials Science and Chemical Engineering, Harbin Engineering University,Harbin 150001,
国际会议
The Sixth China International Conference on High-Performance Ceramics(第六届中国先进陶瓷国际研讨会(CICC-6))
哈尔滨
英文
423-425
2009-08-16（万方平台首次上网日期，不代表论文的发表时间）