Influence of Annealing Temperatures on the Properties of Dual-Layer W-TiO2 Thin Films

摘要：

　　W-TiO2 (W,tungsten) dual-layer thin films are deposited by RF magnetron sputtering onto glass substrates and annealed at 150℃~400℃ for 4hrs.The crystal structure,morphology,and trans-mittance of annealed W-TiO2 dual-layer thin films are investigated by X-ray diffraction,FESEM,and UV-Vis spectrometer,respectively.The annealing temperatures have large effect on the properties of W-TiO2 dual-layer thin films.The band gap energy values of W-TiO2 dual-layer thin films are evaluated from (αhv)1/2 versus energy plots.The energy gap for un-annealed W-TiO2 dual-layer thin film is 3.16 eV.As the annealing temperature increases from 150℃ to 400℃,the energy gap decreases from 3.16 eV to 3.10 eV.

关键词： tungsten TiO2 dual-layer thin films RF sputter Energy gap

作者: Chia-Cheng Huang Fang-Hsing Wang Cheng-Fu Yang Hong-Hsin Huang Cheng-Yi Chen Ping-Chih Huang

作者单位: Dept.Electrical Engineering, National Chung Hsing University, Taiwan Dept.Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung, Taiwan Dept.Chemical and Materials Engineering, Cheng-Shiu University, Kaohsiung, Taiwan Dept.Electrical Engineering, Cheng-Shiu University, Kaohsiung, Taiwan

会议类型: 国际会议

会议名称: The Sixth China International Conference on High-Performance Ceramics(第六届中国先进陶瓷国际研讨会(CICC-6))

会议地点: 哈尔滨

会议语种:英文

页码: 506-509

在线出版日期: 2009-08-16（万方平台首次上网日期，不代表论文的发表时间）