Electrical and Physical Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films under Oxygen Plasma Treatment for Nonvolatile Memory Devices Application

摘要：

　　In this study,the effects of oxygen gas plasma on the surface treatment of Ba(Zr0.1Ti0.9)O3 (BZT) films are investigated.The influence of plasma on the structure is developed by using X-ray diffraction patterns and the electrical characteristics are developed by using the MIM and MFIS capacitor structure.Experiment results clearly indicate that the electrical characteristics of BZT film have improved effectively within oxygen plasma surface treatment.

关键词： BZT Leakage current density Remnant polarization Coercive field

作者: Kai-Huang Chen Ying-Chung Chen Wei-Kuo Chia Zhi-Sheng Chen Cheng-Fu Yang Ho-Hua Chung

作者单位: Department of Electrical Engineering,National Sun Yat-Sen University,Kaohsiung 804,Taiwan Department of Electronic Engineering,Fortune Institute of Technology,Kaohsiung,800,Taiwan Department of Chemical and Materials Engineering,National Kaohsiung University,Kaohsiung 804,Taiwan Department of Mechanical and Automation Engineering,Kao-Yuan University,Kaohsiung,Taiwan

会议类型: 国际会议

会议名称: The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))

会议地点: 长沙

会议语种:英文

页码: 75-77

在线出版日期: 2007-05-10（万方平台首次上网日期，不代表论文的发表时间）