Electrical Characterization and Microstructures of Tb-doped Bi4Ti3O12 Thin Films

摘要：

　　Tb-doped bismuth titanate (BixTbyTi3O12(:) BTT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique.These samples had polycrystalline Bi-layered perovskite structure without preferred orientation,and consisted of well-developed rod-like grains with random orientation.Tb doping into BIT caused a large shift of the Curie temperature (Tc) from 675℃ to lower temperature.The experimental results indicated that Tb doping into BIT result in a remarkable improvement in dielectric property.

关键词： Ferroelectric Dielectric Films

作者: Y.H.Sun M.Chen W.K.An A.H.Cai J.Liu K.L.Su

作者单位: Department of Physics,Hunan Institute of Science and Technology,Yueyang,414000,China

会议类型: 国际会议

会议名称: The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))

会议地点: 长沙

会议语种:英文

页码: 82-84

在线出版日期: 2007-05-10（万方平台首次上网日期，不代表论文的发表时间）