Electrical Characteristics and Microstructures of Ce-doped Bi4Ti3O12 Films

摘要：

　　Sm-doped bismuth titanate and random oriented Bi4-xCexTi3O12 (BCT) thin films were fabricated on Pt/Ti/SiO2/Si substrates rf magnetron sputtering technique.The structures and the ferroelectric properties of the films were investigated.Ce doping leads to a marked improvement in the remanent polarization (Pr) and the coercive field (Ec).At the applied electric field of 100 kV/cm,Pr and Ec of the BCT (x =0.8) film annealed at 650 ℃ are 20.5 μC/cm2 and 60 KV/cm,respectively.However,after 3 × 101 switching cycles,20% degradation of 2Pr is observed in the film.

关键词： Ferroelectric Dielectric Doping Films

作者: S.Chen A.H.Cai X.A.Mei C.Q.Huang W.K.An M.Chen

作者单位: Department of Physics,Hunan Institute of Science and Technology,Yueyang,414000,China

会议类型: 国际会议

会议名称: The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))

会议地点: 长沙

会议语种:英文

页码: 91-94

在线出版日期: 2007-05-10（万方平台首次上网日期，不代表论文的发表时间）