Electrical Characteristics of Fluorine Passivated MOCVD-TiO2 Film on (NH4)2Sx Treated GaAs
The high Dit is the major problem of Ⅲ-V compound semiconductor MOSFET,which causes the pinning of the surface Fermi level near the middle of the energy gap.The GaAs with (NH4)2Sx treatment (S-GaAs) can remove the native oxides on GaAs and prevent it from oxidizing.The electrical characteristics of fluorinated polycrystalline TiO2 films deposited on p-type(100) S-GaAs were investigated.The fluorine from liquid phase deposition solution can passivate the grain boundary of polycrystalline TiO2 prepared by MOCVD.The leakage current through the grain boundaries was suppressed.The leakage current of MOCVD-TiO2/S-GaAs can be improved from 6.8 x 10-6 and 0.2 A/cm2 to 3.41 × 10-7 and 1.13 × 10-6A/cm2 under positive and negative electric fields at 1.5 MV/cm,respectively.Dit and k can be improved from 1.44 × 1012 cm-2eV-1 to 4.6 × 1011 cm2eV-1 and 52 to 65,respectively.The effective oxide charges can be improved from 2.5 × 1012 C/cm2 to 9.3 × 1011 C/cm-2.
GaAs (NH4)2Sx fluorine MOCVD-TiO2
Ming-Kwei Lee Chih-Feng Yen Tsung-Hsiang Shih Chen-Lia Ho Hung-Chang Lee Hwai-Fu Tu Cho-Han Fan
Department of Electrical Engineering,National Sun Yat-sen University,Kaohsiung,80424,Taiwan
国际会议
The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))
长沙
英文
232-234
2007-05-10（万方平台首次上网日期，不代表论文的发表时间）