Interfacial Behavior of SiC-based Boundary Layer Capacitors
SiC-based boundary layer capacitors were prepared by hot pressing.XRD,TEM and the high-resolution TEM techniques were used to characterize the sintered samples.It was found that the width of the grain boundary within the SiC-based boundary capacitors was about 200 nm.Extremely high dielectric constant of >2,400,000 appeared in a wide temperature range from 590℃ to 730℃,with the maximum of >2,900,000.The critical temperature was about 500℃.Space charge polarization was detected as the temperature increased.Nano grains in the boundary phase were observed,which might enhance the space charge behavior.
SiC Boundary layer capacitors Space charge Interface
Rui Zhang Hailong Wang Hongliang Xu Hongxia Lu Daoyuan Yang
School of Materials Science & Engineering,Zhengzhou University,Zhengzhou 450001,China
国际会议
The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))
长沙
英文
235-237
2007-05-10（万方平台首次上网日期，不代表论文的发表时间）