Pulsed Laser Deposition and Characterization of InZnO Alloyed Thin Film
High-quality In2O3 powder and ZnO powder had been used to make the ceramic target and the atomic ratio of 1 to 1 of indium and zinc had been prepared in this study.The alloyed thin films had been deposited on sapphire (001) substrates at different temperatures (100-600℃) by using pulsed laser deposition (PLD) technique.An x-ray diffractometer and an atomic force microscope were used to investigate the structural and morphological properties of the alloyed thin films.It was observed that the alloyed thin films deposited at the temperatures lower than 300℃ were amorphous,and the alloyed thin films deposited at high temperatures were crystallized.A spectrophotometer was used to investigate the transmittances of the alloyed thin films.It was found that the alloyed thin films were of high quality.The band gap energies of the alloys were calculated by linear fitting the sharp absorption edges of the transmittance spectra.The Hall measurements were also carried out to identify the electrical properties of the thin films.
InZnO Alloyed Thin Films Doping Pulsed Laser Deposition
F.K.Shan G.X.Liu B.C.Shin W.J.Lee W.T.Oh
Electronic Ceramics Center,DongEui University,Busan 614-714,Korea
国际会议
The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))
长沙
英文
308-311
2007-05-10（万方平台首次上网日期，不代表论文的发表时间）