Gallium and Nitrogen Co-doped ZnO Thin Films by Pulsed Laser Deposition

摘要：

　　Pulsed laser deposition (PLD) technique is a very powerful method for fabricating various oxide thin films due to its native merits.In this study,gallium and nitrogen co-doped ZnO thin films (0.1 at.%) were deposited at different temperatures (100-600℃) on sapphire (001) s ubstrates by using PLD.X-ray diffractometer,atomic force microscope,spectrophotometer,and spectrometer were used to characterize the structural,the morphological and the optical properties of the thin films.Hall measurements were also carried out to identify the electrical properties of the thin films.

关键词： ZnO Thin Films Doping Pulsed Laser Deposition

作者: G.X.Liu F.K.Shan B.C.Shin W.J.Lee

作者单位: Electronic Ceramics Center,DongEui University,Busan 614-714,South Korea

会议类型: 国际会议

会议名称: The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))

会议地点: 长沙

会议语种:英文

页码: 322-325

在线出版日期: 2007-05-10（万方平台首次上网日期，不代表论文的发表时间）