Investigation of Electron Traps in SnO2 Based Varistor Ceramics
Dense tin oxide based ceramics are a new type of varistor materials.To further understand the electrical properties of SnO2 varistors doped with CoO,Nb2O5,and Cr2O3,the techniques of capacitancevoltage (C-V) measurement and deep level transient spectroscopy (DLTS) were used to investigate the electron traps in the SCN samples (doped with 1.0 mol% CoO and 0.05mol% Nb2O5) and SCNCr samples (doped with 1.0 mol% CoO,0.05mol% Nb2O5 and 0.05mol% Cr2O3).Two electron traps were detected:trap T1 is located at Ec-0.30 + 0.01eV and trap T2 is located at Ec-0.69 + 0.03eV for both SCN and SCNCr samples.The variations in the donor density and trap density could be related to the addition of chromium oxide.The features of these traps are discussed based on the defect theory related to the SnO2 varistors.
SnO2 varistor Electron trap DLTS C-V measurement
Jiwei Fan Robert Freer
Zhongyuan University of Technology,41 Zhongyuan Road(M),Zhengzhou 450007,China School of Materials,The University of Manchester,Manchester M1 7HS,United Kingdom
国际会议
The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))
长沙
英文
517-520
2007-05-10（万方平台首次上网日期，不代表论文的发表时间）