Electrical Properties of Sb-doped BaPbO3 Ceramics

摘要：

　　Sb-doped BaPbO3 ceramics were prepared by sol-gel method.The influence of Pb/Ba ratio and Sb concentration on the electrical properties of BaPb1-x-ySbyO3 (x=0.0,0.1,0.2 and 0≤y≤0.2) compositions were investigated.Holes and Pb vacancies were the major defects in lightly donor-doped BaPbO3,where the increase of donor concentration resulted in decrease of charge carriers (holes),leading to resistivity increasing.In the highly donor-doped conditions,the microstructure or solid solubility substituted defect structure as the main factor affecting the variety of resistivity.The lowest electrical resistivity of Sb-doped BaPbO3 was 2.69 × 10-4 Ω·cm when the Sb concentration y=0.12~0.13.Excess of Pb causes the born of barium vacancies.And,the observed PTCR behavior of BaPb12O3 involves the Barium vacancies in grain boundaries.0.5 mol% Sb-doped BaPbO3 showed the best PTCR behavior and its Curie temperature was about 850℃.

关键词： BaPbO3 Donor Defects Electrical properties

作者: Wang Xin Lu Yudong Zhuang Zhiqiang

作者单位: Key Lab of Specially Functional Materials of Ministry of Education,College of Materials Science & Engineering,South China University of Technology,Guangzhou 510640,China

会议类型: 国际会议

会议名称: The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))

会议地点: 长沙

会议语种:英文

页码: 653-655

在线出版日期: 2007-05-10（万方平台首次上网日期，不代表论文的发表时间）