P-type Transparent Conductivity of Cu1-xAlS2(x=0~0.08)

摘要：

　　A series of Cu1-xAlS2 (x =0 ~ 0.08) bulk samples were synthesized by spark plasma sintering.The electrical and optical properties were investigated.P-type conductions for all samples were confirmed by both positive Seebeck coefficient and Hall coefficient.Bulk undoped CuAlS2 had a high conductivity of about 0.9 S/cm with a large band gap of 3.4 eV at room temperature.For vacancy-doped in Cu site,the carrier concentration was highly enhanced,reaching 1.7 × 1019 cm-3 for 8 mol% doped sample,and without decreasing the bang gap.The introduction of vacancies destroys the continuity of Cu-S network,which decreases the Hall mobility.

关键词： CuAlS2 P-type Band gap Chalcopyrite

作者: Min Ling Liu Fu Qiang Huang L.D.Chen

作者单位: State Key Laboratory of High Performance Ceramics and Superfine Microstructures,Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai 200050,P.R..China

会议类型: 国际会议

会议名称: The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))

会议地点: 长沙

会议语种:英文

页码: 666-668

在线出版日期: 2007-05-10（万方平台首次上网日期，不代表论文的发表时间）