Layer Structure Growth of Orthorhombic Boron Nitride Thin Films by RF-PEPLD

摘要：

　　Orthorhombic boron nitride film is prepared on Si(100) substrate by radio frequency plasma enhanced pulse (Nd(:)YAG) laser deposition (RF-PEPLD) in Ar-N2 gas system,assisted with substrate pulse negative bias-150v,substrate temperature of 500℃ and deposition time of 30 minutes.The phase compositions of the film are characterized by Fourier transform infrared (FTIR) spectroscopy,glancing-angle X-ray diffraction (XRD),Raman spectroscopy and scanning electron microscopy (SEM).The results show that high quality orthorhombic boron nitride film has been prepared.A layer structure growth mechanism of orthorhombic boron nitride phase upon RF-PEPLD is discussed in this paper.A thin layer h-BN 101 is deposited before depositing o-BN and h-BN mixed phase,then o-BN percentage composition of the BN film becomes creasing.

关键词： Orthorhombic boron nitride Film Layer structure growth

作者: Weiqing Li Lijun Zhou Yongnian Zhao

作者单位: Physics Department of Tianjin University,Tianjin 300072,China Department of traffic Information Engineering,Jilin University,Changchun 130022,China National Laboratory of Superhard Materials,Jilin University,Changchun 130012,China

会议类型: 国际会议

会议名称: The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))

会议地点: 长沙

会议语种:英文

页码: 929-932

在线出版日期: 2007-05-10（万方平台首次上网日期，不代表论文的发表时间）