Structure and Dielectric Properties of AlN Multilayered Film on Al Substrate

摘要：

　　AlN multilayered films were deposited on Al substrates using RF reactive magnetron sputtering with Al targets under Ar and N2 atmosphere.Circles of deposition and annealing were repeatedly performed.Macrostructure observations,crystallographic analyses and dielectric property measurements were carried out.The grains of AlN film had a worm-like shape.When the number of layers (and cycles) increased,the (100) and (110) oriented grains weakened and the structure of film changed into (002) and (101) oriented.The capacity-frequency (C-f) curves of Cu-AlN-Al-Cu capacitors,measured at 100 Hz-1 MHz,showed that the dielectric constant and the dielectric loss of AlN decrease with increasing number of cycles,attributed to annealing processes that influences film microstructure and the orientation of worm-like shape grains.

关键词： AlN multilayered film structure dielectric properties cycle index

作者: Xiufeng Song Renli Fu Hong He Deliu Wang

作者单位: College of Materials Science and Technology,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,P.R.China

会议类型: 国际会议

会议名称: The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))

会议地点: 长沙

会议语种:英文

页码: 1383-1385

在线出版日期: 2007-05-10（万方平台首次上网日期，不代表论文的发表时间）