Mass loss in SiC crystal growth process

摘要：

　　The research investigated the mass loss in SiC crystal growth process by analyzing the effects of the content of Si appending in sources material,growth temperature,growth time and atmosphere pressure.The results indicate that mass loss of total system material (source material + crucible + crystal) and crucible augments with increasing of content of Si in sources material,growth temperature and growth time,but crystal mass gain increases.With increasing of atmosphere pressure,mass loss of system material decreases,crucible mass loss increases,crystal mass gain decreases.Si inclusions in crystal multiply with the increasing of the content of Si in source material.

关键词： SiC PVT Crystal growth Mass loss

作者: Jikuan Cheng Jiqiang Gao Jianfeng Yang Junlin Liu Xian Jiang Yonggui Shi

作者单位: State Key Laboratory for Mechanical Behavior of Materials,Xian Jiaotong University,Xian 710049,China

会议类型: 国际会议

会议名称: The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))

会议地点: 长沙

会议语种:英文

页码: 1558-1560

在线出版日期: 2007-05-10（万方平台首次上网日期，不代表论文的发表时间）