Growth and Characterization of Silicon Carbide by Sublimation

摘要：

　　Bulk silicon carbide (SiC) single crystal was fabricated by attaching abrasive SiC powder directly to graphite electrode.The substrate temperature was important to SiC crystal growth.When the temperature of substrate varied from 2300K to 2600K,with substrate temperature increase,the size of finally obtained SiC single crystal increased.At 2600K,the maximum size of SiC crystal,2cm in diameter,was obtained.The effect of temperature to SiC single crystal growth rate and the growth kinetics were discussed.The phase composition and surface morphology was studied by XRD and SEM respectively.

关键词： Crystal growth Silicon carbide Growth rate Surface morphology

作者: Wang Yang Wan Long Liu Xiaopan Ma Wenmin

作者单位: College of Material Science and Engineering,Hunan Univ,Changsha 410082,Hunan,China

会议类型: 国际会议

会议名称: The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))

会议地点: 长沙

会议语种:英文

页码: 1561-1563

在线出版日期: 2007-05-10（万方平台首次上网日期，不代表论文的发表时间）