Simulation of the Grain Boundary Effects in PTCR Ceramics
The positive temperature coefficient of resistivity (PTCR) behavior of semiconductive BaTiO3 ceramics is often explained by the Heywang model.However,Heywang model couldnt explain some experimental phenomena of jump range more than 106.This paper considered that the migration of donors,electrons and holes has important influence on grain boundary effect.A differential equation about Fermi level was established on the base of Heywang model.By solving the equation the jump range can be calculated quantitatively.It was found that a potential well exists on the edge of grain due to the donor ionization,and the experimental phenomena of PTC jump range more than 106 could be explained.
PTCR Grain boundary
Chao Fang Dongxiang Zhou Huan liu Shuping Gong
Huazhong University of Science and Technology,China
国际会议
The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))
长沙
英文
1692-1694
2007-05-10（万方平台首次上网日期，不代表论文的发表时间）