Temperature Dependency of Dielectric Properties in Epitaxially Grown SrBi4Ti4O15 Films with Different Orientation

摘要：

　　(001)-,(11(10)),and (105)-oriented SrBi4Ti4O15 films with its c-axis tilted 0,45 and 55° from the surface normal were epitaxially grown by metal organic chemical vapor deposition and the temperature dependency of the dielectric constant was systematically investigated.Relative dielectric constant,ε1,and its temperature dependency increased when the tilting angle of the c-axis from the substrate surface normal increased.Temperature dependency of εr was positive in case of the (105) and (11(10)) orientation,which is in good agreement with the conventional ferroelectric materials.On the other hand,it became negative for (001) orientation.This shows the orientation dependency ofεr in SrBi4Ti4O15.

关键词： Bismuth layer structured dielectric Orientation dependency SrBi4Ti4O15 Epitaxial films Dielectric property Temperature dependency

作者: Hiroshi Funakubo Muneyasu Suzuki Kenji Takahashi Takayuki Watanabe

作者单位: Department of Innovative and Engineered Materials,Tokyo Institute of Technology,J2-43,4259 Nagatsuta Department of Innovative and Engineered Materials,Tokyo Institute of Technology,J2-43,4259 Nagatsuta Department of Innovative and Engineered Materials,Tokyo Institute of Technology,J2-43,4259 Nagatsuta

会议类型: 国际会议

会议名称: The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))

会议地点: 长沙

会议语种:英文

页码: 1811-1813

在线出版日期: 2007-05-10（万方平台首次上网日期，不代表论文的发表时间）