0.75SrBi2Ta2O9-0.25Bi3TiTaO9 Layered Structural Thin Films:Microstructure and Ferroelectric Properties

摘要：

　　0.75SrBi2Ta2O9-0.25Bi3TiTaOg(SBT-BTT) thin films were prepared by the modified metalorganic solution deposition (MOSD) technique.The microstructure and ferroelectric properties of SBT-BTT thin films were studied.The SBT-BTT thin films were produced at 750℃.The grain size and surface roughness of SBT-BTT films showed significant enhancement with an increase in annealing temperatures.It is found that SBT-BTT thin films have good ferroelectric properties.The measured remanent polarization values for SBT-BTT,SBT and BTT capacitors were 15,7,5 and 4.8μC/cm2,respectively.The coercive field for SBT-BTT capacitors was 50kV/cm.More importantly,the polarization of SBT-BTT capacitors only decreased 5% after 1011 switching cycles at a frequency of 1 MHz.

关键词： (1-x)SrBi2Ta2O9-xBi3TiTaOg Microstructure Ferroelectric properties MOSD

作者: Dan Xie Zhigang Zhang Tianling Ren Litian Liu

作者单位: Institute of Microelectronics,Tsinghua University,Beijing 100084,P.R.China

会议类型: 国际会议

会议名称: The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))

会议地点: 长沙

会议语种:英文

页码: 1814-1816

在线出版日期: 2007-05-10（万方平台首次上网日期，不代表论文的发表时间）