Microstructure and Dielectric Properties of LixTixNi1-2xO Thin Films

摘要：

　　LixTixNi1-2xO (x =0,10 and 20 at.%) thin films with 200 nm in thickness were deposited on Pt/Ti/SiO2/Si (100) by a sol-gel spin-coating method.All samples have a uniform microstructure.The grain sizes grew from 100 nm to 300 nm by co-doping Li and Ti.The LiTiNiO thin films consist of NiO,NiTiO3 and Li2NiO2,while the Li-free thin films consist ofNiO,NiTiO3 and NiTi0.99O3.The dielectric properties of the LiTiNiO thin films improved obviously by co-doping Li and Ti,but excess Li increases the amount of Li2NiO2 phase and decreases the dielectric properties.The dielectric constants at 100 Hz for the Li0.1Ti0.1Ni0.8O and Li0.2Ti0.2Ni0.6O thin films are 506 and 388 respectively.Appropriate co-doping contents of Li and Ti are important to obtain a high dielectric property.

关键词： NiO thin film Sol-Gel Dielectric constant Li and Ti doping

作者: Cui-hua Zhao Bo-ping Zhang Yong Liu Song-jie Li

作者单位: School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China

会议类型: 国际会议

会议名称: The Fifth China International Conference on High-Performance Ceramics (第五届先进陶瓷国际研讨会(CICC-5))

会议地点: 长沙

会议语种:英文

页码: 1817-1819

在线出版日期: 2007-05-10（万方平台首次上网日期，不代表论文的发表时间）