Reconditioning of silicon substrates for manifold re-use in the layer transfer process with porous silicon
In the present paper we investigate the impact of different substrate reconditioning methods on the electrical quality of the subsequently epitaxially grown silicon layers (epi-layers).We show that the removal of the residual porous layer on the substrate after lift-off is crucial for the quality of subsequent epitaxial growth and compare different wet chemical treatments for removal.Based on the results we choose KOH to demonstrate the successful 13-fold re-use of a single substrate.We determine Lbulk of the epi-layer grown after thirteen re-uses of the same substrate to correspond to the fourfold of the epi-layer thickness.Resultant epi-layers grown after several re-uses of the same substrates are still suitable for a sufficient current collection in a thin solar cell device.
Verena Steckenreiter Jan Hensen Alwina Knorr Enrique Garralaga Rojas Sarah Kajari-Schr(o)der Rolf Brendel
Institute for Solar Energy Research Hamelin(ISFH), Am Ohrberg 1, D-31860 Emmerthal, GERMANY Institute for Solar Energy Research Hamelin(ISFH), Am Ohrberg 1, D-31860 Emmerthal, GERMANY;Institut
国际会议
The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)
杭州
英文
1-4
2012-11-05（万方平台首次上网日期，不代表论文的发表时间）