Large-size and complete single crystal growth of monocrystalline silicon by using seed cast-grown technique

摘要：

　　A main challenge of large-size monocrystalline silicon growth by seed casting technique is the polycrystalline nucleation along the bottom and sides of a crucible.The polycrystalline nucleation can easily protrude into the interior of crystal and cause large volume of multicrystalline silicon generated inside the whole ingot.To grow large-size single crystal silicon by the seed casting technique,nucleation of polycrystalline silicon along the bottom and sides of a crucible must be avoided.Theoretical and numerical tools are used to design thermal system and validate the thermal system.Results of numerical simulation showed that it is feasible to grow a single crystal of silicon by the seed casting technique.

作者: B.Gao H.Harada Y.Miyamura S.Nakano K.Kakimoto

作者单位: Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan National Institute for Materials Science, Tsukuba-city Ibaraki 305-0047, Japan

会议类型: 国际会议

会议名称: The 22nd International Photovoltaic Science and Engineering Conference (第22届国际光伏科学与工程会议)

会议地点: 杭州

会议语种:英文

页码: 1-4

在线出版日期: 2012-11-05（万方平台首次上网日期，不代表论文的发表时间）